2022 Year in Review

April 2023 Stats


The publication database currently has 1686 entries.
208 Films
282 Precursors
78 Dep Hardware Sets
254 Characteristics
93 Theses
5172 Authors

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2021 Year in Review
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Recent Database Additions
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis Experimental and theoretical determination of the role of ions in atomic layer annealing Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

Raffaella Lo Nigro Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Raffaella Lo Nigro returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
2Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
3Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
4Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
5Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
6Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
7Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
8Advances in the fabrication of graphene transistors on flexible substrates
9Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
10Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

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