Publication Information

Title:
Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B140 (2017)
Date:
2016-12-02

Author Information

Name Institution
Emanuela SchiliròUniversità di Catania
Patrick FiorenzaNational Research Council (CNR - Italy)
Giuseppe GrecoNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)
Raffaella Lo NigroNational Research Council (CNR - Italy)

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

AlGaN

Keywords

Notes

889