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Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

Type:
Journal
Info:
physica status solidi (c) Volume 12, Issue 7, pages 980-984, July 2015
Date:
2015-06-05
DOI:
http://dx.doi.org/10.1002/pssc.201510016

Author Information

Name Institution
Emanuela SchiliròNational Research Council (CNR - Italy)
Giuseppe GrecoNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Cristina TudiscoUniversità di Catania
Guglielmo Guido CondorelliUniversità di Catania
Salvatore Di FrancoUniversità di Catania
Fabrizio RoccaforteNational Research Council (CNR - Italy)
Raffaella Lo NigroNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Substrates

Si(100)
AlGaN

Notes

464