2023 Year in Review

The publication database currently has 1728 entries.

216 Films

291 Precursors

80 Dep Hardware Sets

256 Characteristics

98 Theses

5313 Authors

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2021 Year in Review

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2022 Year in Review

Nanolaminated Al₂O₃/HfO₂ dielectrics for silicon carbide based devices

Type:

Journal

Info:

Journal of Vacuum Science & Technology A 38, 032410 (2020)

Date:

2020-04-01

DOI:

http://dx.doi.org/10.1116/1.5134662

Author Information

Name	Institution
Raffaella Lo Nigro	CNR-IMM
Emanuela Schilirò	CNR-IMM
Patrick Fiorenza	CNR-IMM
Fabrizio Roccaforte	CNR-IMM

Films

Plasma Al₂O₃

Hardware used: SENTECH

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 250C

Plasma HfO₂

Hardware used: SENTECH

TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me₂N)₄Hf, also CAS# 19782-68-4

CAS#: 19962-11-9

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Microstructure

Analysis: TEM, Transmission Electron Microscope

Diagnostic: JEOL 2100F

Characteristic: Morphology, Roughness, Topography

Analysis: AFM, Atomic Force Microscopy

Diagnostic: Digital Instrument D3000

Characteristic: Dielectric Constant, Permittivity

Analysis: C-V, Capacitance-Voltage Measurements

Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Fixed Charge