Publication Information

Title:
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032410 (2020)
Date:
2020-04-01

Author Information

Name Institution
Raffaella Lo NigroCNR-IMM
Emanuela SchilirĂ²CNR-IMM
Patrick FiorenzaCNR-IMM
Fabrizio RoccaforteCNR-IMM

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2

Keywords

Notes

1515