Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032410 (2020)
Date:
2020-04-01
DOI:
http://dx.doi.org/10.1116/1.5134662

Author Information

Name Institution
Raffaella Lo NigroCNR-IMM
Emanuela SchiliròCNR-IMM
Patrick FiorenzaCNR-IMM
Fabrizio RoccaforteCNR-IMM

Films

Plasma Al2O3

Hardware used: SENTECH
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfO2

Hardware used: SENTECH
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instrument D3000

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

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