Publication Information

Title:
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Type:
Journal
Info:
Materials Science Forum (Volume 858) p. 685-688, Silicon Carbide and Related Materials 2015
Date:
2016-01-02

Author Information

Name Institution
Emanuela SchilirĂ²National Research Council (CNR - Italy)
Salvatore Di FrancoNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Corrado BongiornoNational Research Council (CNR - Italy)
Hassan GargouriSentech Instruments GmbH
Mario SaggioSTMicroelectronics
Raffaella Lo NigroNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: SENTECH


Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

4H-SiC
SiO2

Keywords

Gate Dielectric

Notes

818