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Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Type:
Journal
Info:
Materials Science Forum (Volume 858) p. 685-688, Silicon Carbide and Related Materials 2015
Date:
2016-01-02
Author Information
| Name | Institution |
|---|---|
| Emanuela Schilirò | National Research Council (CNR - Italy) |
| Salvatore Di Franco | National Research Council (CNR - Italy) |
| Patrick Fiorenza | National Research Council (CNR - Italy) |
| Corrado Bongiorno | National Research Council (CNR - Italy) |
| Hassan Gargouri | Sentech Instruments GmbH |
| Mario Saggio | STMicroelectronics |
| Raffaella Lo Nigro | National Research Council (CNR - Italy) |
| Fabrizio Roccaforte | National Research Council (CNR - Italy) |
Films
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| 4H-SiC |
| SiO2 |
Notes
| 818 |