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Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

Type:
Journal
Info:
Materials Science Forum (Volume 858) p. 685-688, Silicon Carbide and Related Materials 2015
Date:
2016-01-02
DOI:
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.685

Author Information

Name Institution
Emanuela SchiliròNational Research Council (CNR - Italy)
Salvatore Di FrancoNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Corrado BongiornoNational Research Council (CNR - Italy)
Hassan GargouriSentech Instruments GmbH
Mario SaggioSTMicroelectronics
Raffaella Lo NigroNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: SENTECH
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

4H-SiC
SiO2

Notes

818