Publication Information

Title:
Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
Type:
Journal
Info:
Materials Science in Semiconductor Processing 97 (2019) 35-39
Date:
2019-03-05

Author Information

Name Institution
Emanuela SchiliròCNR-IMM
Filippo GiannazzoCNR-IMM
Corrado BongiornoCNR-IMM
Salvatore Di FrancoCNR-IMM
Giuseppe GrecoCNR-IMM
Fabrizio RoccaforteCNR-IMM
Pawel PrystawkoTop-GaN Ltd
Piotr KruszewskiTop-GaN Ltd
Mike LeszczyńskiTop-GaN Ltd
Marcin KryskoTop-GaN Ltd
Adrien MichonUniversité Côte d'Azur, CNRS, CRHEA
Yvon CordierUniversité Côte d'Azur, CNRS, CRHEA
Ildiko CoraHungarian Academy of Sciences
Béla PéczHungarian Academy of Sciences
Hassan GargouriSentech Instruments GmbH
Raffaella Lo NigroCNR-IMM

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Keywords

Notes

1347