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Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Type:
Journal
Info:
Materials Science in Semiconductor Processing 97 (2019) 35-39
Date:
2019-03-05
DOI:
https://doi.org/10.1016/j.mssp.2019.03.005

Author Information

Name Institution
Emanuela SchiliròCNR-IMM
Filippo GiannazzoCNR-IMM
Corrado BongiornoCNR-IMM
Salvatore Di FrancoCNR-IMM
Giuseppe GrecoCNR-IMM
Fabrizio RoccaforteCNR-IMM
Pawel PrystawkoTop-GaN Ltd
Piotr KruszewskiTop-GaN Ltd
Mike LeszczyńskiTop-GaN Ltd
Marcin KryskoTop-GaN Ltd
Adrien MichonUniversité Côte d'Azur, CNRS, CRHEA
Yvon CordierUniversité Côte d'Azur, CNRS, CRHEA
Ildiko CoraHungarian Academy of Sciences
Béla PéczHungarian Academy of Sciences
Hassan GargouriSentech Instruments GmbH
Raffaella Lo NigroCNR-IMM

Films

Plasma AlN

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Dimension 3100

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 3010

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: MDC mercury probe model 802B

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: MDC mercury probe model 802B

Substrates

GaN

Notes

1347