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Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
Type:
Journal
Info:
Materials Science in Semiconductor Processing 97 (2019) 35-39
Date:
2019-03-05
Author Information
| Name | Institution |
|---|---|
| Emanuela Schilirò | CNR-IMM |
| Filippo Giannazzo | CNR-IMM |
| Corrado Bongiorno | CNR-IMM |
| Salvatore Di Franco | CNR-IMM |
| Giuseppe Greco | CNR-IMM |
| Fabrizio Roccaforte | CNR-IMM |
| Pawel Prystawko | Top-GaN Ltd |
| Piotr Kruszewski | Top-GaN Ltd |
| Mike Leszczyński | Top-GaN Ltd |
| Marcin Krysko | Top-GaN Ltd |
| Adrien Michon | Université Côte d'Azur, CNRS, CRHEA |
| Yvon Cordier | Université Côte d'Azur, CNRS, CRHEA |
| Ildiko Cora | Hungarian Academy of Sciences |
| Béla Pécz | Hungarian Academy of Sciences |
| Hassan Gargouri | Sentech Instruments GmbH |
| Raffaella Lo Nigro | CNR-IMM |
Films
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 1347 |