Publication Information

Title: Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Type: Journal

Info: Thin Solid Films 617 (2016) 138 - 142

Date: 2016-02-24

DOI: http://dx.doi.org/10.1016/j.tsf.2016.02.046

Author Information

Name

Institution

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Substrates

AlGaN

Keywords

Notes

972



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