Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Type:
Journal
Info:
Thin Solid Films 617 (2016) 138 - 142
Date:
2016-02-24

Author Information

Name Institution
Raffaella Lo NigroNational Research Council (CNR - Italy)
Emanuela SchilirĂ²National Research Council (CNR - Italy)
Giuseppe GrecoNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

AlGaN

Keywords

Notes

972