Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
Type:
Journal
Info:
Thin Solid Films 617 (2016) 138 - 142
Date:
2016-02-24
Author Information
Name | Institution |
---|---|
Raffaella Lo Nigro | National Research Council (CNR - Italy) |
Emanuela SchilirĂ² | National Research Council (CNR - Italy) |
Giuseppe Greco | National Research Council (CNR - Italy) |
Patrick Fiorenza | National Research Council (CNR - Italy) |
Fabrizio Roccaforte | National Research Council (CNR - Italy) |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
AlGaN |
Notes
972 |