Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Publication Information

Title: Negative charge trapping effects in Al₂O₃ films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Type: Journal

Info: AIP ADVANCES 6, 075021 (2016)

Date: 2016-07-18

DOI: http://dx.doi.org/10.1063/1.4960213

Author Information

Name

Institution

Emanuela Schilirò

National Research Council (CNR - Italy)

Raffaella Lo Nigro

National Research Council (CNR - Italy)

Patrick Fiorenza

National Research Council (CNR - Italy)

Fabrizio Roccaforte

National Research Council (CNR - Italy)

Films

Plasma Al₂O₃ using SENTECH

Deposition Temperature = 250C

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Microstructure

TEM, Transmission Electron Microscope

JEOL 2010F

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Fixed Charge Density

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Breakdown Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

-

Thickness

Ellipsometry

-

Substrates

SiO₂

Keywords

Notes

880

Shortcuts

Films

Deposition Hardware

Film and Plasma Characteristics

Multi-factor Search

ALD and PEALD Background

On-line PEALD Theses

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