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Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Type:
Journal
Info:
AIP ADVANCES 6, 075021 (2016)
Date:
2016-07-18
DOI:
http://dx.doi.org/10.1063/1.4960213

Author Information

Name Institution
Emanuela SchiliròNational Research Council (CNR - Italy)
Raffaella Lo NigroNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

SiO2

Notes

880