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Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
Type:
Journal
Info:
Journal of Crystal Growth 539 (2020) 125624
Date:
2020-03-24
Author Information
| Name | Institution |
|---|---|
| Raffaella Lo Nigro | CNR-IMM |
| Emanuela Schilirò | CNR-IMM |
| Giovanni Mannino | CNR-IMM |
| Salvatore Di Franco | CNR-IMM |
| Fabrizio Roccaforte | CNR-IMM |
Films
Film/Plasma Properties
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Substrates
| Silicon |
Notes
| 1500 |