Publication Information

Title:
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
Type:
Journal
Info:
Journal of Crystal Growth 539 (2020) 125624
Date:
2020-03-24

Author Information

Name Institution
Raffaella Lo NigroCNR-IMM
Emanuela SchilirĂ²CNR-IMM
Giovanni ManninoCNR-IMM
Salvatore Di FrancoCNR-IMM
Fabrizio RoccaforteCNR-IMM

Films



Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Substrates

Silicon

Keywords

Plasma vs Thermal Comparison

Notes

1500