Publication Information

Title:
In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 4852-4858
Date:
2015-03-31

Author Information

Name Institution
Il-Kwon OhYonsei University
Kangsik KimUlsan National Institute of Science and Technology
Zonghoon LeeUlsan National Institute of Science and Technology
Jeong-Gyu SongYonsei University
Chang Wan LeeYonsei University
David ThompsonApplied Materials
Han-Bo-Ram LeeIncheon National University
Woo-Hee KimStanford University
Wan Joo MaengUniversity of Wisconsin - Madison
Hyungjun KimYonsei University

Films


Plasma Al2O3


Plasma MgO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

Ge

Keywords

High-k Dielectric Thin Films

Notes

PEALD HfO2 on TMA and MgCp2 cleaned Ge substrate was studied.
PEALD HfO2, HfO2/Al2O3, and HfO2/MgO on uncleaned Ge substrate were also studied for comparison.
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