In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 4852-4858
Date:
2015-03-31
Author Information
Name | Institution |
---|---|
Il-Kwon Oh | Yonsei University |
Kangsik Kim | Ulsan National Institute of Science and Technology |
Zonghoon Lee | Ulsan National Institute of Science and Technology |
Jeong-Gyu Song | Yonsei University |
Chang Wan Lee | Yonsei University |
David Thompson | Applied Materials |
Han-Bo-Ram Lee | Incheon National University |
Woo-Hee Kim | Stanford University |
Wan Joo Maeng | University of Wisconsin - Madison |
Hyungjun Kim | Yonsei University |
Films
Plasma HfO2
Plasma Al2O3
Plasma MgO
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
Ge |
Notes
PEALD HfO2 on TMA and MgCp2 cleaned Ge substrate was studied. |
PEALD HfO2, HfO2/Al2O3, and HfO2/MgO on uncleaned Ge substrate were also studied for comparison. |
339 |