About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides

Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 4852-4858
Date:
2015-03-31
DOI:
http://dx.doi.org/10.1039/C4TC02686A

Author Information

Name Institution
Il-Kwon OhYonsei University
Kangsik KimUlsan National Institute of Science and Technology
Zonghoon LeeUlsan National Institute of Science and Technology
Jeong-Gyu SongYonsei University
Chang Wan LeeYonsei University
David ThompsonApplied Materials
Han-Bo-Ram LeeIncheon National University
Woo-Hee KimStanford University
Wan Joo MaengUniversity of Wisconsin - Madison
Hyungjun KimYonsei University

Films

Plasma HfO2

Hardware used: SNTEK Co. ALD 5008
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: SNTEK Co. ALD 5008
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma MgO

Hardware used: SNTEK Co. ALD 5008
bis(cyclopentadienyl)Magnesium, MgCp2
CAS#: 1284-72-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL 2100

Substrates

Ge

Notes

PEALD HfO2 on TMA and MgCp2 cleaned Ge substrate was studied.
PEALD HfO2, HfO2/Al2O3, and HfO2/MgO on uncleaned Ge substrate were also studied for comparison.
339