Publication Information

Title: Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2017, 9 (27), pp 23072-23080

Date: 2017-06-27

DOI: http://dx.doi.org/10.1021/acsami.7b00538

Author Information

Name

Institution

Duke University

Seattle University

Duke University

IBM

Duke University

Films

Deposition Temperature Range = 120-332C

75-24-1

7732-18-5

Deposition Temperature Range = 120-332C

75-24-1

7782-44-7

Deposition Temperature Range = 120-332C

19962-11-9

7732-18-5

Deposition Temperature Range = 120-332C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Dimension 3100

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Thickness

Ellipsometry

J.A. Woollam M-88

Images

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

FEI Titan S 80-300 TEM/STEM

Transistor Characteristics

Transistor Characterization

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Substrates

MoS2

Keywords

Notes

1144



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