Publication Information

Title:
Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (27), pp 23072-23080
Date:
2017-06-27

Author Information

Name Institution
Katherine M. PriceDuke University
Kirstin E. SchaubleSeattle University
Felicia A. McGuireDuke University
Damon B. FarmerIBM
Aaron D. FranklinDuke University

Films

Thermal Al2O3


Plasma Al2O3




Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

MoS2

Keywords

Notes

1144