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Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (27), pp 23072-23080
Date:
2017-06-27
DOI:
http://dx.doi.org/10.1021/acsami.7b00538

Author Information

Name Institution
Katherine M. PriceDuke University
Kirstin E. SchaubleSeattle University
Felicia A. McGuireDuke University
Damon B. FarmerIBM
Aaron D. FranklinDuke University

Films

Thermal Al2O3

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 120-332C

Plasma Al2O3

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 120-332C

Thermal HfO2

Hardware used: Kurt J Lesker ALD-150L
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 120-332C

Plasma HfO2

Hardware used: Kurt J Lesker ALD-150L
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 120-332C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Dimension 3100

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-88

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

MoS2

Notes

1144