Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (27), pp 23072-23080
Date:
2017-06-27
Author Information
| Name | Institution |
|---|---|
| Katherine M. Price | Duke University |
| Kirstin E. Schauble | Seattle University |
| Felicia A. McGuire | Duke University |
| Damon B. Farmer | IBM |
| Aaron D. Franklin | Duke University |
Films
Thermal Al2O3
Plasma Al2O3
Thermal HfO2
Plasma HfO2
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| MoS2 |
Notes
| 1144 |