Publication Information

Title: A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

Type: Journal

Info: Applied Physics Letters 109, 223501 (2016)

Date: 2016-11-01

DOI: http://dx.doi.org/10.1063/1.4971188

Author Information

Name

Institution

University of Texas at Austin

University of Texas at Austin

University of Texas at Austin

New York University

University of Texas at Austin

Films

Plasma HfO2 using Unknown

Deposition Temperature = 200C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Memristor Characteristics

Memristor Characterization

Agilent B1500A Semiconductor Device Analyzer

Etch Rate

Unknown

-

Substrates

CeOx

Keywords

Resistance RAM

Notes

778



Shortcuts



© 2014-2019 plasma-ald.com