Publication Information

Title:
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
Type:
Journal
Info:
Applied Physics Letters 109, 223501 (2016)
Date:
2016-11-01

Author Information

Name Institution
Cheng-Chih HsiehUniversity of Texas at Austin
Anupam RoyUniversity of Texas at Austin
Yao-Feng ChangUniversity of Texas at Austin
Davood ShahrjerdiNew York University
Sanjay K. BanerjeeUniversity of Texas at Austin

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Memristor Characteristics
Analysis: Memristor Characterization

Characteristic: Etch Rate
Analysis: -

Substrates

CeOx

Keywords

Resistance RAM

Notes

778