
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
Type:
Journal
Info:
Applied Physics Letters 109, 223501 (2016)
Date:
2016-11-01
Author Information
Name | Institution |
---|---|
Cheng-Chih Hsieh | University of Texas at Austin |
Anupam Roy | University of Texas at Austin |
Yao-Feng Chang | University of Texas at Austin |
Davood Shahrjerdi | New York University |
Sanjay K. Banerjee | University of Texas at Austin |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Memristor Characteristics
Analysis: Memristor Characterization
Characteristic: Etch Rate
Analysis: -
Substrates
CeOx |
Notes
778 |