Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Nanomaterials 2023, 13, 161
Date:
2022-12-27

Author Information

Name Institution
Boyun ChoiChungnam National University
Hyeong-U KimKorea Institute of Machinery and Materials
Nari JeonChungnam National University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Ion Density
Analysis: -

Characteristic: Ion Flux
Analysis: -

Characteristic: Electron Temperature, Te
Analysis: -

Substrates

Si(100)
TiN
ITO

Keywords

High Aspect Ratio

Notes

nice plot of thermal and plasma ALD HfO2 roughness vs deposition temperature data from several papers for TDMAH and TEMAH
1657