Publication Information

Title: Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2

Type: Journal

Info: Journal of The Electrochemical Society, 156 (5) G33-G36 (2009)

Date: 2008-11-16

DOI: http://dx.doi.org/10.1149/1.3089976

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Plasma HfO2 using Custom

Deposition Temperature Range N/A

19962-11-9

7782-44-7

Plasma HfOF using Custom

Deposition Temperature Range N/A

19962-11-9

7782-44-7

75-73-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Synchrotron

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Synchrotron

Conduction Band Edge States

NEXAFS, Near-Edge X-ray Absorption Fine Structures

Synchrotron

Interface State Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Keywords

Notes

741



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