Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices

Type:
Journal
Info:
ACS Appl. Nano Mater. 2019, 2, 4085-4094
Date:
2019-07-01
DOI:
http://dx.doi.org/10.1021/acsanm.9b00505

Author Information

Name Institution
Katherine M. PriceDuke University
Sina NajmaeiU.S. Army Research Laboratory
Chinedu E. EkumaU.S. Army Research Laboratory
Robert A. BurkeU.S. Army Research Laboratory
Madan DubeyU.S. Army Research Laboratory
Aaron D. FranklinDuke University

Films

Plasma HfO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 120C

Thermal HfO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 120C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Keithley 4200-SCS

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Alpha 300R Confocal Raman Microscope

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Alpha 300R Confocal Raman Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Substrates

MoS2

Notes

1724