Publication Information

Title:
Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A132
Date:
2013-12-09

Author Information

Name Institution
Khalil El-HajjamLyon Nanotechnology Institute (INL)
Nicolas BabouxLyon Nanotechnology Institute (INL)
Francis CalmonLyon Nanotechnology Institute (INL)
Abdelkader SouifiFrench National Centre for Scientific Research (CNRS)
Olivier PonceletUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)
Serge EcoffeyFrench National Centre for Scientific Research (CNRS)
Dominique DrouinFrench National Centre for Scientific Research (CNRS)

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fowler-Nordheim (FN) Current Plots
Analysis: I-V, Current-Voltage Measurements

Characteristic: Effective Mass
Analysis: I-V, Current-Voltage Measurements

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Pt

Keywords

Single Electron Transistor (SET)
Dielectric Stack
PEALD Film Development
Tunnel Junctions
Nanolaminate

Notes

Anneal
Longer O2 plasma results in lower film capacitance.
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