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ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies

Type:
Journal
Info:
Materials Science and Engineering B 285 (2022) 115964
Date:
2022-08-17
DOI:
https://doi.org/10.1016/j.mseb.2022.115964

Author Information

Name Institution
M.A. Martí­nez-PuenteCIMAV - Center for Research in Advanced Materials
P. HorleyCIMAV - Center for Research in Advanced Materials
F.S. Aguirre-TostadoCIMAV - Center for Research in Advanced Materials
J. López-MedinaNational Autonomous University of Mexico
H.A. Bórbon-NuñezNational Autonomous University of Mexico
H. TiznadoNational Autonomous University of Mexico
A. Susarrey-ArceUniversity of Twente
E. Martí­nez-GuerraCIMAV - Center for Research in Advanced Materials

Films

Thermal HfO2

Hardware used: Beneq TFS-200
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Beneq TFS-200
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam EC400

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Nova NanoSEM 200

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Characteristic: Valence Band Maximum
Analysis: valence band XPS
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Characteristic: Leakage Current
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Characteristic: Breakdown Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Custom

Substrates

Si(100)

Notes

Compared plasma process with and without ion bombardment by using grounded grid between plasma source and substrate.
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