Publication Information

Title: Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 56, No. 3, pp. 905--910

Date: 2010-02-12

DOI: https://inis.iaea.org/search/search.aspx?orig_q=RN:44036343

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma HfNx using Custom

Deposition Temperature Range = 100-400C

19962-11-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Barrier Characteristics

Anneal

-

Resistivity, Sheet Resistance

Four-point Probe

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

-

Morphology, Roughness, Topography

Unknown

-

Substrates

Si(100)

Keywords

Interconnect

Diffusion Barrier

Notes

701



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