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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 56, No. 3, pp. 905--910
Date:
2010-02-12
Author Information
| Name | Institution |
|---|---|
| Wooho Jeong | Hanyang University |
| Youngbin Ko | Hanyang University |
| Seokhwan Bang | Hanyang University |
| Seungjun Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Barrier Characteristics
Analysis: Anneal
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: -
Substrates
| Si(100) |
Keywords
| Interconnect |
| Diffusion Barrier |
Notes
| 701 |