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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 56, No. 3, pp. 905--910
Date:
2010-02-12
Author Information
| Name | Institution |
|---|---|
| Wooho Jeong | Hanyang University |
| Youngbin Ko | Hanyang University |
| Seokhwan Bang | Hanyang University |
| Seungjun Lee | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Barrier Characteristics
Analysis: Anneal
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: -
Substrates
| Si(100) |
Keywords
| Interconnect |
| Diffusion Barrier |
Notes
| 701 |