Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 56, No. 3, pp. 905--910
Date:
2010-02-12
DOI:
https://inis.iaea.org/search/search.aspx?orig_q=RN:44036343

Author Information

Name Institution
Wooho JeongHanyang University
Youngbin KoHanyang University
Seokhwan BangHanyang University
Seungjun LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfNx

Hardware used: Custom
TDMAHf, (Me2N)4Hf, [(CH3)2N]4Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: Anneal
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: -
Diagnostic: -

Substrates

Si(100)

Keywords

Interconnect
Diffusion Barrier

Notes

701