Publication Information

Title:
Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (32), pp 21089-21094
Date:
2016-07-26

Author Information

Name Institution
Muhammad Adi NegaraStanford University
M. KitanoStanford University
R. D. LongStanford University
Paul C. McIntyreStanford University

Films

Thermal Al2O3


Other AlON

Hardware used: Custom


CAS#: 7732-18-5

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

GaN

Keywords

Notes

858