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Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (32), pp 21089-21094
Date:
2016-07-26
Author Information
| Name | Institution |
|---|---|
| Muhammad Adi Negara | Stanford University |
| M. Kitano | Stanford University |
| R. D. Long | Stanford University |
| Paul C. McIntyre | Stanford University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| GaN |
Notes
| 858 |