Publication Information

Title: Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2016, 8 (32), pp 21089-21094

Date: 2016-07-26

DOI: http://dx.doi.org/10.1021/acsami.6b03862

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Films

Thermal Al2O3 using Custom

Deposition Temperature = 270C

75-24-1

7732-18-5

Other AlON using Custom

Deposition Temperature = 270C

75-24-1

7732-18-5

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Gaertner

Thickness

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Plasma Species

OES, Optical Emission Spectroscopy

Ocean Optics S2000

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

GaN

Keywords

Notes

858



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