Publication Information

Title:
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:315
Date:
2017-04-12

Author Information

Name Institution
An-Jye TzouNational Chiao Tung University
Kuo-Hsiung ChuNational Chiao Tung University
I-Feng LinNational Chiao Tung University
Erik Ă˜strengNational Chiao Tung University
Yung-Sheng FangNational Chiao Tung University
Xiao-Peng WuNational Chiao Tung University
Bo-Wei WuNational Nano Device Labs
Chang-Hong ShenNational Nano Device Labs
Jia-Ming ShiehNational Nano Device Labs
Wen-Kuan YehNational Nano Device Labs
Chun-Yen ChangNational Chiao Tung University
Hao-Chung KuoNational Nano Device Labs

Films

Plasma AlN


Plasma AlN


Thermal Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

AlGaN
AlN

Keywords

Notes

1004