About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:315
Date:
2017-04-12
DOI:
http://dx.doi.org/10.1186/s11671-017-2082-0

Author Information

Name Institution
An-Jye TzouNational Chiao Tung University
Kuo-Hsiung ChuNational Chiao Tung University
I-Feng LinNational Chiao Tung University
Erik ØstrengNational Chiao Tung University
Yung-Sheng FangNational Chiao Tung University
Xiao-Peng WuNational Chiao Tung University
Bo-Wei WuNational Nano Device Labs
Chang-Hong ShenNational Nano Device Labs
Jia-Ming ShiehNational Nano Device Labs
Wen-Kuan YehNational Nano Device Labs
Chun-Yen ChangNational Chiao Tung University
Hao-Chung KuoNational Nano Device Labs

Films

Plasma AlN

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Plasma AlN

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Thermal Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Quantera SXM

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

AlGaN
AlN

Notes

1004