AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:315
Date:
2017-04-12
Author Information
| Name | Institution |
|---|---|
| An-Jye Tzou | National Chiao Tung University |
| Kuo-Hsiung Chu | National Chiao Tung University |
| I-Feng Lin | National Chiao Tung University |
| Erik Østreng | National Chiao Tung University |
| Yung-Sheng Fang | National Chiao Tung University |
| Xiao-Peng Wu | National Chiao Tung University |
| Bo-Wei Wu | National Nano Device Labs |
| Chang-Hong Shen | National Nano Device Labs |
| Jia-Ming Shieh | National Nano Device Labs |
| Wen-Kuan Yeh | National Nano Device Labs |
| Chun-Yen Chang | National Chiao Tung University |
| Hao-Chung Kuo | National Nano Device Labs |
Films
Plasma AlN
Plasma AlN
Thermal Al2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| AlGaN |
| AlN |
Notes
| 1004 |