Publication Information

Title: AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Nanoscale Research Letters (2017) 12:315

Date: 2017-04-12

DOI: http://dx.doi.org/10.1186/s11671-017-2082-0

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Nano Device Labs

National Nano Device Labs

National Nano Device Labs

National Nano Device Labs

National Chiao Tung University

National Nano Device Labs

Films

Plasma AlN using Picosun R200

Deposition Temperature = 350C

75-24-1

7727-37-9

Plasma AlN using Picosun R200

Deposition Temperature = 300C

75-24-1

7664-41-7

Thermal Al2O3 using Picosun R200

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI Quantera SXM

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Transistor Characteristics

Transistor Characterization

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Substrates

AlGaN

AlN

Keywords

Notes

1004



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