Publication Information

Title: Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

Type: Journal

Info: RSC Adv., 2016, 6, 68515-68524

Date: 2016-07-04

DOI: http://dx.doi.org/10.1039/C6RA10909H

Author Information

Name

Institution

Sejong University

Sejong University

Sejong University

Sejong University

Sejong University

Kyung Hee University

Kyung Hee University

Films

Thermal SiNx using Custom

Deposition Temperature = 300C

13465-77-5

7664-41-7

Other SiNx using Custom

Deposition Temperature = 300C

13465-77-5

7664-41-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Refractive Index

Ellipsometry

Ellipso Technology Elli-SE

Substrates

Silicon

Keywords

Modeling

Compare experiment with modelling

Notes

963



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