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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
Type:
Journal
Info:
RSC Adv., 2016, 6, 68515-68524
Date:
2016-07-04
Author Information
| Name | Institution |
|---|---|
| Luchana L. Yusup | Sejong University |
| Jae-Min Park | Sejong University |
| Yong-Ho Noh | Sejong University |
| Sun-Jae Kim | Sejong University |
| Won-Jun Lee | Sejong University |
| Sora Park | Kyung Hee University |
| Young-Kyun Kwon | Kyung Hee University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Substrates
| Silicon |
Keywords
| Modeling |
| Compare experiment with modelling |
Notes
| 963 |