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Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 3, PP. 265-268, 2016
Date:
2016-01-19
Author Information
| Name | Institution |
|---|---|
| Mengyuan Hua | Hong Kong University of Science and Technology |
| Yunyou Lu | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Cheng Liu | Hong Kong University of Science and Technology |
| Kai Fu | Suzhou Institute of Nano-Tech and Nano-Bionics |
| Yong Cai | Suzhou Institute of Nano-Tech and Nano-Bionics |
| Baoshun Zhang | Suzhou Institute of Nano-Tech and Nano-Bionics |
| Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
| GaN |
Notes
| 802 |