Publication Information

Title: Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 3, PP. 265-268, 2016

Date: 2016-01-19

DOI: http://dx.doi.org/10.1109/LED.2016.2519680

Author Information

Name

Institution

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Suzhou Institute of Nano-Tech and Nano-Bionics

Suzhou Institute of Nano-Tech and Nano-Bionics

Suzhou Institute of Nano-Tech and Nano-Bionics

Hong Kong University of Science and Technology

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

GaN

Keywords

Passivation

Notes

802



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