Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 3, PP. 265-268, 2016
Date:
2016-01-19
DOI:
http://dx.doi.org/10.1109/LED.2016.2519680

Author Information

Name Institution
Mengyuan HuaHong Kong University of Science and Technology
Yunyou LuHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Kai FuSuzhou Institute of Nano-Tech and Nano-Bionics
Yong CaiSuzhou Institute of Nano-Tech and Nano-Bionics
Baoshun ZhangSuzhou Institute of Nano-Tech and Nano-Bionics
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

GaN

Notes

802