In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
Type:
Journal
Info:
Nanotechnology 24 (2013) 295202
Date:
2013-04-19
Author Information
| Name | Institution |
|---|---|
| Sang-Joon Park | Korea Research Institute of Standards and Science (KRISS) |
| Jeong-Pyo Lee | Korea Research Institute of Standards and Science (KRISS) |
| Jong Shik Jang | Korea Research Institute of Standards and Science (KRISS) |
| Hyun Rhu | Korea Research Institute of Standards and Science (KRISS) |
| Hyunung Yu | Korea Research Institute of Standards and Science (KRISS) |
| Byung Youn You | Korea Research Institute of Standards and Science (KRISS) |
| Chang Soo Kim | Korea Research Institute of Standards and Science (KRISS) |
| Kyung Joong Kim | Korea Research Institute of Standards and Science (KRISS) |
| Young Joon Cho | Korea Research Institute of Standards and Science (KRISS) |
| Sunggi Baik | Pohang University of Science and Technology (POSTECH) |
| Woo Lee | Korea Research Institute of Standards and Science (KRISS) |
Films
Plasma TiO2
Plasma TiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Conformal Raman Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(001) |
| Pt |
Notes
| 623 |