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Publication Information

Title: In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices

Type: Journal

Info: Nanotechnology 24 (2013) 295202

Date: 2013-04-19

DOI: http://dx.doi.org/10.1088/0957-4484/24/29/295202

Author Information

Name

Institution

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Pohang University of Science and Technology (POSTECH)

Korea Research Institute of Standards and Science (KRISS)

Films

Deposition Temperature = 150C

546-68-9

7782-44-7

Deposition Temperature = 150C

546-68-9

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Microstructure

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku RU 200B

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Conformal Raman Spectroscopy

Custom

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Refractive Index

Ellipsometry

J.A. Woollam M-2000D

Extinction Coefficient

Ellipsometry

J.A. Woollam M-2000D

Resistive Switching

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Si(001)

Pt

Keywords

Resistance RAM

Resistive Switch

Notes

623



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