Publication Information

Title:
In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
Type:
Journal
Info:
Nanotechnology 24 (2013) 295202
Date:
2013-04-19

Author Information

Name Institution
Sang-Joon ParkKorea Research Institute of Standards and Science (KRISS)
Jeong-Pyo LeeKorea Research Institute of Standards and Science (KRISS)
Jong Shik JangKorea Research Institute of Standards and Science (KRISS)
Hyun RhuKorea Research Institute of Standards and Science (KRISS)
Hyunung YuKorea Research Institute of Standards and Science (KRISS)
Byung Youn YouKorea Research Institute of Standards and Science (KRISS)
Chang Soo KimKorea Research Institute of Standards and Science (KRISS)
Kyung Joong KimKorea Research Institute of Standards and Science (KRISS)
Young Joon ChoKorea Research Institute of Standards and Science (KRISS)
Sunggi BaikPohang University of Science and Technology (POSTECH)
Woo LeeKorea Research Institute of Standards and Science (KRISS)

Films

Plasma TiO2


Plasma TiO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Conformal Raman Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(001)
Pt

Keywords

Resistance RAM
Resistive Switch

Notes

623