Publication Information

Title:
Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
Type:
Journal
Info:
Japanese Journal of Applied Physics, Vol. 46, No. 7A, 2007, pp. 4085-4088
Date:
2007-07-04

Author Information

Name Institution
Seungchan ChoPusan National University
Keunwoo LeeHanyang University
Pungkeun SongPusan National University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University

Films

Plasma ZrN


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Unknown
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Unknown
Analysis: Etch Pit Test

Characteristic: Unknown
Analysis: Anneal

Characteristic: Barrier Characteristics
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Barrier Characteristics
Analysis: XRD, X-Ray Diffraction

Characteristic: Barrier Characteristics
Analysis: Etch Pit Test

Substrates

p-type SOI(100)

Keywords

Remote Plasma Enhanced Atomic Layer Deposition
Zirconium Nitride
Diffusion Barrier

Notes

Substrates pirahna and HF cleaned
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