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Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor

Type:
Journal
Info:
Japanese Journal of Applied Physics, Vol. 46, No. 7A, 2007, pp. 4085-4088
Date:
2007-07-04
DOI:
http://dx.doi.org/10.1143/JJAP.46.4085

Author Information

Name Institution
Seungchan ChoPusan National University
Keunwoo LeeHanyang University
Pungkeun SongPusan National University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University

Films

Plasma ZrN

Hardware used: Custom
TDEAZr, tetrakis(diethylamido)zirconium, zirconium diethylamide, (Et2N)4Zr
CAS#: 13801-49-5
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 150-400C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Unknown
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Unknown
Analysis: Etch Pit Test
Diagnostic: -

Characteristic: Unknown
Analysis: Anneal
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: Etch Pit Test
Diagnostic: -

Substrates

p-type SOI(100)

Notes

Substrates pirahna and HF cleaned
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