Publication Information

Title:
Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01B103 (2016)
Date:
2015-11-16

Author Information

Name Institution
Ashish V. JagtianiIBM
Hiroyuki MiyazoeIBM
Josephine ChangIBM
Damon B. FarmerIBM
Michael EngelIBM
Deborah NeumayerIBM
Shu-Jen HanIBM
Sebastian U. EngelmannIBM
David R. BorisU.S. Naval Research Laboratory
Sandra C. HernándezU.S. Naval Research Laboratory
Evgeniya H. LockU.S. Naval Research Laboratory
Scott G. WaltonU.S. Naval Research Laboratory
Eric A. JosephIBM

Films

Other HfO2

Hardware used: Unknown

CAS#: 7727-37-9

Other HfO2

Hardware used: Unknown

CAS#: 7782-44-7

Other HfO2

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Graphene

Keywords

Notes

Graphene was subjected to N2, O2, or SF6 plasma for functionalization prior to thermal HfO2 ALD growth.
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