Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01B103 (2016)
Date:
2015-11-16
DOI:
http://dx.doi.org/10.1116/1.4936622

Author Information

Name Institution
Ashish V. JagtianiIBM
Hiroyuki MiyazoeIBM
Josephine ChangIBM
Damon B. FarmerIBM
Michael EngelIBM
Deborah NeumayerIBM
Shu-Jen HanIBM
Sebastian U. EngelmannIBM
David R. BorisU.S. Naval Research Laboratory
Sandra C. HernándezU.S. Naval Research Laboratory
Evgeniya H. LockU.S. Naval Research Laboratory
Scott G. WaltonU.S. Naval Research Laboratory
Eric A. JosephIBM

Films

Other HfO2

Hardware used: Unknown
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Other HfO2

Hardware used: Unknown
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Other HfO2

Hardware used: Unknown
SF6, Sulfur Hexafluoride
CAS#: 2551-62-4
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Graphene

Notes

Graphene was subjected to N2, O2, or SF6 plasma for functionalization prior to thermal HfO2 ALD growth.
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