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Publication Information

Title: Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils

Type: Journal

Info: Solid-State Electronics 54 (2010) 1326 - 1331

Date: 2010-05-16

DOI: http://dx.doi.org/10.1016/j.sse.2010.05.021

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Images

TEM, Transmission Electron Microscope

JEOL JEM 1300S

Breakdown Voltage

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

SiO2

Keywords

Gate Dielectric

Flexible Circuits

Notes

703

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I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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