Publication Information

Title:
Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
Type:
Journal
Info:
Solid-State Electronics 54 (2010) 1326 - 1331
Date:
2010-05-16

Author Information

Name Institution
Jaehyun MoonElectronics and Telecommunication Research Institute, (ETRI)
Yong-Hae KimElectronics and Telecommunication Research Institute, (ETRI)
Dong-Jin ParkElectronics and Telecommunication Research Institute, (ETRI)
Choong-Heui ChungElectronics and Telecommunication Research Institute, (ETRI)
Seung-Youl KangElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3

Hardware used: Unknown


CAS#: 7782-44-7

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2

Keywords

Gate Dielectric
Flexible Circuits

Notes

703