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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
Type:
Journal
Info:
Applied Physics Letters 103, 013107 (2013)
Date:
2013-06-17
Author Information
| Name | Institution |
|---|---|
| Taekyung Lim | Kyonggi University |
| Dongchool Kim | Kyonggi University |
| Sanghyun Ju | Kyonggi University |
Films
Film/Plasma Properties
Substrates
| Graphene |
Keywords
Notes
| TMA + H2O is a guess. |
| 606 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |