Publication Information

Title:
Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
Type:
Journal
Info:
Applied Physics Letters 103, 013107 (2013)
Date:
2013-06-17

Author Information

Name Institution
Taekyung LimKyonggi University
Dongchool KimKyonggi University
Sanghyun JuKyonggi University

Films

Other Al2O3

Hardware used: Unknown


CAS#: 7732-18-5

CAS#: 7727-37-9

Film/Plasma Properties

Substrates

Graphene

Keywords

Notes

TMA + H2O is a guess.
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