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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
Type:
Journal
Info:
Applied Physics Letters 103, 013107 (2013)
Date:
2013-06-17
Author Information
| Name | Institution |
|---|---|
| Taekyung Lim | Kyonggi University |
| Dongchool Kim | Kyonggi University |
| Sanghyun Ju | Kyonggi University |
Films
Film/Plasma Properties
Substrates
| Graphene |
Keywords
Notes
| TMA + H2O is a guess. |
| 606 |