Publication Information

Title: Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

Type: Journal

Info: Applied Physics Letters 103, 013107 (2013)

Date: 2013-06-17

DOI: http://dx.doi.org/10.1063/1.4813016

Author Information

Name

Institution

Taekyung Lim

Kyonggi University

Dongchool Kim

Kyonggi University

Sanghyun Ju

Kyonggi University

Films

Other Al2O3 using Unknown

Deposition Temperature Range N/A

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

H2O, Water

7732-18-5

N2, Nitrogen

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Graphene

Keywords

Notes

TMA + H2O is a guess.

606


Mark Sowa

Shortcuts

Films
Precursors
Deposition Hardware
Film and Plasma Characteristics
Multi-factor Search
ALD and PEALD Background
On-line PEALD Theses
About plasma-ald.com

Contact Us
ALD Links

© 2014-2019 plasma-ald.com