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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
Type:
Journal
Info:
Applied Physics Letters 103, 013107 (2013)
Date:
2013-06-17
Author Information
| Name | Institution |
|---|---|
| Taekyung Lim | Kyonggi University |
| Dongchool Kim | Kyonggi University |
| Sanghyun Ju | Kyonggi University |
Films
Film/Plasma Properties
Substrates
| Graphene |
Keywords
Notes
| TMA + H2O is a guess. |
| 606 |