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Publication Information

Title: Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

Type: Journal

Info: Applied Physics Letters 103, 013107 (2013)

Date: 2013-06-17

DOI: http://dx.doi.org/10.1063/1.4813016

Author Information

Name

Institution

Taekyung Lim

Kyonggi University

Dongchool Kim

Kyonggi University

Sanghyun Ju

Kyonggi University

Films

Other Al2O3 using Unknown

Deposition Temperature Range N/A

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Water, H2O

7732-18-5

Nitrogen, N2

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Graphene

Keywords

Notes

TMA + H2O is a guess.

606


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