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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

Type:
Journal
Info:
Applied Physics Letters 103, 013107 (2013)
Date:
2013-06-17
DOI:
http://dx.doi.org/10.1063/1.4813016

Author Information

Name Institution
Taekyung LimKyonggi University
Dongchool KimKyonggi University
Sanghyun JuKyonggi University

Films

Other Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Graphene

Notes

TMA + H2O is a guess.
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