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Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
Type:
Journal
Info:
Thin Solid Films 685 (2019) 393 - 401
Date:
2019-06-29
Author Information
| Name | Institution |
|---|---|
| Jun Beom Kim | Yeungnam University |
| Dip K. Nandi | Yeungnam University |
| Tae Hyun Kim | Yeungnam University |
| Yujin Jang | Korean Basic Science Institute |
| Jong-Seong Bae | Korean Basic Science Institute |
| Tae Eun Hong | Korean Basic Science Institute |
| Soo-Hyun Kim | Yeungnam University |
Films
Plasma WN
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Work Function
Analysis: Scanning Kelvin Probe Microscopy (SKPM)
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
| SiO2 |
Notes
| 1357 |