Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

Type:
Journal
Info:
Current Applied Physics Volume 18, Issue 11, 2018, Pages 1436-1440
Date:
2018-08-24
DOI:
https://doi.org/10.1016/j.cap.2018.08.012

Author Information

Name Institution
Hohyun SongKorea Advanced Institute of Science and Technology
Sanghun SeoWintel Corporation
Hongyoung ChangKorea Advanced Institute of Science and Technology

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 300-550C

Plasma SiCxNy

Hardware used: Custom Remote Inductively Coupled Plasma
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 300-550C

Film/Plasma Properties

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

1624