Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

Type:
Journal
Info:
Current Applied Physics Volume 18, Issue 11, 2018, Pages 1436-1440
Date:
2018-08-24

Author Information

Name Institution
Hohyun SongKorea Advanced Institute of Science and Technology
Sanghun SeoWintel Corporation
Hongyoung ChangKorea Advanced Institute of Science and Technology

Films

Plasma SiNx


Plasma SiCxNy


Film/Plasma Properties

Characteristic: Electron Density, ne
Analysis: Langmuir Probe

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Notes

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