Publication Information

Title:
Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B128 (2017)
Date:
2016-12-05

Author Information

Name Institution
Sydney C. ButteraCarleton University
David J. MandiaCarleton University
Sean T. BarryCarleton University

Films

Thermal Al2O3


Plasma AlN


Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Keywords

Notes

Lots of O in the AlN.
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