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Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B128 (2017)
Date:
2016-12-05
DOI:
http://dx.doi.org/10.1116/1.4972469

Author Information

Name Institution
Sydney C. ButteraCarleton University
David J. MandiaCarleton University
Sean T. BarryCarleton University

Films

Thermal Al2O3

Hardware used: Picosun SUNALE R-150B
3DMAAl, (Me2N)3Al, (Me2N)6Al2, Tris (DiMethylAmido) Aluminum(III)
CAS#: 32093-39-3
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Plasma AlN

Hardware used: Picosun R200
3DMAAl, (Me2N)3Al, (Me2N)6Al2, Tris (DiMethylAmido) Aluminum(III)
CAS#: 32093-39-3
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: TA Instruments Q500 with EGA furnace

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Specs

Substrates

Si(100)

Notes

Lots of O in the AlN.
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