Publication Information

Title: Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

Type: Conference Proceedings

Info: IEEE J. Electron Dev. Soc., Vol. 59, No. 10, May 2014, pp. 2662

Date: 2014-05-19

DOI: http://gaasmantech.com/Digests/2014/papers/049.pdf

Author Information

Name

Institution

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

Films

Deposition Temperature = 250C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Unknown

I-V, Current-Voltage Measurements

Unknown

Unknown

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

GaN

Keywords

Notes

363



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