Publication Information

Title:
Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 031514 (2018)
Date:
2018-04-06

Author Information

Name Institution
Woochool JangHanyang University
Hyunjung KimHanyang University
Youngkyun KweonHanyang University
Chanwon JungHanyang University
Haewon ChoHanyang University
Seokyoon ShinHanyang University
Hyunjun KimHanyang University
Kyungpil LimHanyang University
Hyeongtag JeonHanyang University
Heewoo LimHanyang University

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Keywords

Notes

1536