
Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 031514 (2018)
Date:
2018-04-06
Author Information
Name | Institution |
---|---|
Woochool Jang | Hanyang University |
Hyunjung Kim | Hanyang University |
Youngkyun Kweon | Hanyang University |
Chanwon Jung | Hanyang University |
Haewon Cho | Hanyang University |
Seokyoon Shin | Hanyang University |
Hyunjun Kim | Hanyang University |
Kyungpil Lim | Hanyang University |
Hyeongtag Jeon | Hanyang University |
Heewoo Lim | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Wet Etch Resistance
Analysis: Custom
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
Si(100) |
Notes
1536 |