Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (32), pp 20865-20871
Date:
2016-07-22

Author Information

Name Institution
Jae-Min ParkSejong University
Se Jin JangDNF Co. Ltd.
Luchana L. YusupSejong University
Won-Jun LeeSejong University
Sang-Ick LeeDNF Co. Ltd.

Films


Film/Plasma Properties

Characteristic: Precursor Vapor Pressure
Analysis: Vapor Pressure

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Keywords

Modeling
PEALD Film Development

Notes

796