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Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (32), pp 20865-20871
Date:
2016-07-22
DOI:
http://dx.doi.org/10.1021/acsami.6b06175

Author Information

Name Institution
Jae-Min ParkSejong University
Se Jin JangDNF Co. Ltd.
Luchana L. YusupSejong University
Won-Jun LeeSejong University
Sang-Ick LeeDNF Co. Ltd.

Films

Plasma SiNx

Hardware used: CN1 Atomic Premium
Bis(dimethylaminomethylsilyl)(trimethylsilyl)amine, Me3SiN(SiHMeNMe2)2, (CH3)3SiN(SiH(CH3)N(CH3)2)2
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 200-500C

Film/Plasma Properties

Characteristic: Precursor Vapor Pressure
Analysis: Vapor Pressure
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Substrates

Si(100)

Notes

796