Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2016, 8 (32), pp 20865-20871

Date: 2016-07-22

DOI: http://dx.doi.org/10.1021/acsami.6b06175

Author Information

Name

Institution

Sejong University

DNF Co. Ltd.

Sejong University

Sejong University

DNF Co. Ltd.

Films

Deposition Temperature Range = 200-500C

0-0-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Precursor Vapor Pressure

Vapor Pressure

Unknown

Precursor Characterization

TGA, Thermo Gravimetric Analysis

Unknown

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Refractive Index

Ellipsometry

Ellipso Technology Elli-SE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific ESCA LAB 250 XPS Spectrometer

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Thickness

TEM, Transmission Electron Microscope

JEOL 2100F

Conformality, Step Coverage

TEM, Transmission Electron Microscope

JEOL 2100F

Substrates

Si(100)

Keywords

Modeling

PEALD Film Development

Notes

796



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