Publication Information

Title:
Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
Type:
Conference Proceedings
Info:
2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Date:
2015-04-27

Author Information

Name Institution
Y. G. YangNational Chiao Tung University
B. Y. TsuiNational Chiao Tung University

Films

Plasma AlON

Hardware used: Unknown


CAS#: 7782-44-7

CAS#: 7727-37-9

Plasma AlN


Film/Plasma Properties

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

GeO2

Keywords

Notes

545