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Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
Type:
Journal
Info:
Materials Science and Engineering 41 (2012) 012006
Date:
2012-05-14
Author Information
| Name | Institution |
|---|---|
| Fabian Koehler | Global Foundries |
| Dina H. Triyoso | Global Foundries |
| Itasham Hussain | Global Foundries |
| S. Mutas | Global Foundries |
| H. Bernhardt | Global Foundries |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Wet Etch Resistance
Analysis: Custom
Substrates
Notes
| Si precursor is a novel low-temperature precursor, monochloro-silane |
| 1366 |