Publication Information

Title:
Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
Type:
Journal
Info:
Materials Science and Engineering 41 (2012) 012006
Date:
2012-05-14

Author Information

Name Institution
Fabian KoehlerGlobal Foundries
Dina H. TriyosoGlobal Foundries
Itasham HussainGlobal Foundries
S. MutasGlobal Foundries
H. BernhardtGlobal Foundries

Films

Plasma SiNx

Hardware used: Unknown

CAS#: 7664-41-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Wet Etch Resistance
Analysis: Custom

Substrates

Keywords

Notes

Si precursor is a novel low-temperature precursor, monochloro-silane
1366