Publication Information

Title:
Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01A101 (2017)
Date:
2016-10-03

Author Information

Name Institution
Hwanwoo KimHanyang University
Hyoseok SongHanyang University
Changhee ShinHanyang University
Kangsoo KimSamsung Electronics Co.
Woochool JangHanyang University
Hyungjun KimHanyang University
Seokyoon ShinHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Stress
Analysis: Stress Measurement

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Substrates

Si(100)
Cu

Keywords

Notes

854