Publication Information

Title: Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology A 35, 01A101 (2017)

Date: 2016-10-03

DOI: http://dx.doi.org/10.1116/1.4964889

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Deposition Temperature Range = 300-450C

993-07-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Stress

Stress Measurement

Frontier Semiconductor FSM 900C2C

Density

XRR, X-Ray Reflectivity

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Diffusion Barrier Properties

AES, Auger Electron Spectroscopy

Unknown

Diffusion Barrier Properties

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Unknown

Substrates

Si(100)

Cu

Keywords

Notes

854



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