
Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01A101 (2017)
Date:
2016-10-03
Author Information
Name | Institution |
---|---|
Hwanwoo Kim | Hanyang University |
Hyoseok Song | Hanyang University |
Changhee Shin | Hanyang University |
Kangsoo Kim | Samsung Electronics Co. |
Woochool Jang | Hanyang University |
Hyungjun Kim | Hanyang University |
Seokyoon Shin | Hanyang University |
Hyeongtag Jeon | Hanyang University |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Stress
Analysis: Stress Measurement
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Substrates
Si(100) |
Cu |
Notes
854 |