Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 04DF02 (2015)
Date:
2014-11-26
DOI:
http://dx.doi.org/10.7567/JJAP.54.04DF02

Author Information

Name Institution
Nicolò RonchiIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Threshold Voltage Shift
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Notes

ASM PEALD SiNx compared with other gate dielectric materials for leakage, threshold voltage shift, and dynamic on-resistance dispersion.
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