Publication Information

Title:
Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 04DF02 (2015)
Date:
2014-11-26

Author Information

Name Institution
Nicolò RonchiIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Threshold Voltage Shift
Analysis: I-V, Current-Voltage Measurements

Substrates

Keywords

Gate Dielectric

Notes

ASM PEALD SiNx compared with other gate dielectric materials for leakage, threshold voltage shift, and dynamic on-resistance dispersion.
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