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Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 04DF02 (2015)
Date:
2014-11-26
Author Information
| Name | Institution |
|---|---|
| Nicolò Ronchi | IMEC |
Films
Plasma SiNx
Hardware used: ASM Eagle XP8
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Threshold Voltage Shift
Analysis: I-V, Current-Voltage Measurements
Substrates
Notes
| ASM PEALD SiNx compared with other gate dielectric materials for leakage, threshold voltage shift, and dynamic on-resistance dispersion. |
| 266 |