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Publication Information

Title: Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

Type: Journal

Info: Japanese Journal of Applied Physics 54, 04DF02 (2015)

Date: 2014-11-26

DOI: http://dx.doi.org/10.7567/JJAP.54.04DF02

Author Information

Name

Institution

IMEC

Films

Plasma SiNx using ASM Eagle XP8

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Threshold Voltage Shift

I-V, Current-Voltage Measurements

Unknown

Substrates

Keywords

Gate Dielectric

Notes

ASM PEALD SiNx compared with other gate dielectric materials for leakage, threshold voltage shift, and dynamic on-resistance dispersion.

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