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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
Type:
Journal
Info:
IEEE Electron Device Letters
Date:
2016-01-01
Author Information
| Name | Institution |
|---|---|
| Vladamir Djara | IBM |
| Veeresh Deshpande | IBM Research, Zurich Research Lab |
| Marilyne Sousa | IBM Research, Zurich Research Lab |
| Daniele Caimi | IBM Research, Zurich Research Lab |
| Lukas Czornomaz | IBM Research, Zurich Research Lab |
| Jean Fompeyrine | IBM Research, Zurich Research Lab |
Films
Film/Plasma Properties
Substrates
Notes
| 619 |