
CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
Type:
Journal
Info:
IEEE Electron Device Letters
Date:
2016-01-01
Author Information
Name | Institution |
---|---|
Vladamir Djara | IBM |
Veeresh Deshpande | IBM Research, Zurich Research Lab |
Marilyne Sousa | IBM Research, Zurich Research Lab |
Daniele Caimi | IBM Research, Zurich Research Lab |
Lukas Czornomaz | IBM Research, Zurich Research Lab |
Jean Fompeyrine | IBM Research, Zurich Research Lab |
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Film/Plasma Properties
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Notes
619 |