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Publication Information

Title: CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm

Type: Journal

Info: IEEE Electron Device Letters

Date: 2016-01-01

DOI: http://dx.doi.org/10.1109/LED.2015.2514080

Author Information

Name

Institution

IBM

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

Films

Plasma SiNx using Unknown

Deposition Temperature Range N/A

Thermal HfO2 using Unknown

Deposition Temperature Range N/A

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

619


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