CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
Type:
Journal
Info:
IEEE Electron Device Letters
Date:
2016-01-01
Author Information
| Name | Institution |
|---|---|
| Vladamir Djara | IBM |
| Veeresh Deshpande | IBM Research, Zurich Research Lab |
| Marilyne Sousa | IBM Research, Zurich Research Lab |
| Daniele Caimi | IBM Research, Zurich Research Lab |
| Lukas Czornomaz | IBM Research, Zurich Research Lab |
| Jean Fompeyrine | IBM Research, Zurich Research Lab |
Films
Film/Plasma Properties
Substrates
Notes
| 619 |