Publication Information

Title:
CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
Type:
Journal
Info:
IEEE Electron Device Letters
Date:
2016-01-01

Author Information

Name Institution
Vladamir DjaraIBM
Veeresh DeshpandeIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Daniele CaimiIBM Research, Zurich Research Lab
Lukas CzornomazIBM Research, Zurich Research Lab
Jean FompeyrineIBM Research, Zurich Research Lab

Films

Plasma SiNx

Hardware used: Unknown


Thermal HfO2

Hardware used: Unknown


Thermal Al2O3

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

Notes

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