Title: Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
Type: Journal
Info: 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Date: 2015-11-02
DOI: http://dx.doi.org/10.1109/WiPDA.2015.7369305
Name
Institution
University of Padova
University of Padova
University of Padova
University of Padova
University of Padova
University of Padova
Characteristic
Analysis
Diagnostic
479
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