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Publication Information

Title: Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena

Type: Journal

Info: 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Date: 2015-11-02

DOI: http://dx.doi.org/10.1109/WiPDA.2015.7369305

Author Information

Name

Institution

University of Padova

University of Padova

University of Padova

University of Padova

University of Padova

University of Padova

Films

Plasma SiNx using Unknown

Deposition Temperature Range N/A

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

479


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