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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
Type:
Journal
Info:
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Date:
2015-11-02
Author Information
| Name | Institution |
|---|---|
| Enrico Zanoni | University of Padova |
| Matteo Meneghini | University of Padova |
| Gaudenzio Meneghesso | University of Padova |
| Davide Bisi | University of Padova |
| Isabella Rossetto | University of Padova |
| Antonio Stocco | University of Padova |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 479 |