Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena

Type:
Journal
Info:
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Date:
2015-11-02
DOI:
http://dx.doi.org/10.1109/WiPDA.2015.7369305

Author Information

Name Institution
Enrico ZanoniUniversity of Padova
Matteo MeneghiniUniversity of Padova
Gaudenzio MeneghessoUniversity of Padova
Davide BisiUniversity of Padova
Isabella RossettoUniversity of Padova
Antonio StoccoUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Keywords

Notes

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