Publication Information

Title:
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
Type:
Journal
Info:
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Date:
2015-11-02

Author Information

Name Institution
Enrico ZanoniUniversity of Padova
Matteo MeneghiniUniversity of Padova
Gaudenzio MeneghessoUniversity of Padova
Davide BisiUniversity of Padova
Isabella RossettoUniversity of Padova
Antonio StoccoUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown


Thermal Al2O3

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

Notes

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