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Ideal for:
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Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 32, 021807 (2014)
Date:
2014-02-18
DOI:
http://dx.doi.org/10.1116/1.4867357

Author Information

Name Institution
Romuald BlancSTMicroelectronics
François LeverdSTMicroelectronics
Maxine DarnonCEA - Grenoble
Gilles CungeCEA - Grenoble
Sylvain DavidCEA - Grenoble
Olivier JoubertCEA - Grenoble

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Notes

622