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Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2015, 7 (20), pp 10806-10813
Date:
2015-04-30
DOI:
http://dx.doi.org/10.1021/acsami.5b01531

Author Information

Name Institution
Rafaiel A. OvanesyanColorado School of Mines
Dennis M. HausmannLam Research Corporation
Sumit AgarwalColorado School of Mines

Films

Plasma SiNx

Hardware used: Custom
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 350-450C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: ATR-FTIR
Diagnostic: Nicolet 6700

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 2010F

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: HFS, Hydrogen Forward Scattering
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

355