SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition

Type:
Conference Proceedings
Info:
43rd International Symposium on Compound Semiconductors (ISCS)
Date:
2016-06-26
DOI:
http://dx.doi.org/10.1109/ICIPRM.2016.7528674

Author Information

Name Institution
Takayuki SuzukiToyota Technological Institute
Tomiaki YamadaToyota Technological Institute
Ryosuke KawaiToyota Technological Institute
Shohei KawaguchiToyota Technological Institute
Dongyan ZhangToyota Technological Institute
Naotaka IwataToyota Technological Institute

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Notes

969