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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
Type:
Conference Proceedings
Info:
43rd International Symposium on Compound Semiconductors (ISCS)
Date:
2016-06-26
Author Information
| Name | Institution |
|---|---|
| Takayuki Suzuki | Toyota Technological Institute |
| Tomiaki Yamada | Toyota Technological Institute |
| Ryosuke Kawai | Toyota Technological Institute |
| Shohei Kawaguchi | Toyota Technological Institute |
| Dongyan Zhang | Toyota Technological Institute |
| Naotaka Iwata | Toyota Technological Institute |
Films
Film/Plasma Properties
Substrates
| GaN |
Keywords
| Passivation |
Notes
| 969 |