Publication Information

Title:
SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
Type:
Conference Proceedings
Info:
43rd International Symposium on Compound Semiconductors (ISCS)
Date:
2016-06-26

Author Information

Name Institution
Takayuki SuzukiToyota Technological Institute
Tomiaki YamadaToyota Technological Institute
Ryosuke KawaiToyota Technological Institute
Shohei KawaguchiToyota Technological Institute
Dongyan ZhangToyota Technological Institute
Naotaka IwataToyota Technological Institute

Films

Plasma SiNx

Hardware used: Unknown


Plasma Al2O3

Hardware used: Unknown


Film/Plasma Properties

Substrates

GaN

Keywords

Passivation

Notes

969