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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
Type:
Conference Proceedings
Info:
43rd International Symposium on Compound Semiconductors (ISCS)
Date:
2016-06-26
Author Information
| Name | Institution |
|---|---|
| Takayuki Suzuki | Toyota Technological Institute |
| Tomiaki Yamada | Toyota Technological Institute |
| Ryosuke Kawai | Toyota Technological Institute |
| Shohei Kawaguchi | Toyota Technological Institute |
| Dongyan Zhang | Toyota Technological Institute |
| Naotaka Iwata | Toyota Technological Institute |
Films
Film/Plasma Properties
Substrates
| GaN |
Keywords
| Passivation |
Notes
| 969 |