Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 56, No. 1, pp. 104--107
Date:
2009-12-01
DOI:
https://inis.iaea.org/search/search.aspx?orig_q=RN:44022473

Author Information

Name Institution
Han-Bo-Ram LeeYonsei University
Jae-Min KimYonsei University
Hyungjun KimYonsei University
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Jeongwon LeePohang University of Science and Technology (POSTECH)
Inchan HwangPohang University of Science and Technology (POSTECH)

Films

Plasma Co

Hardware used: Quros Plus 150
Bis(N,N'-diisopropylacetamidinato)cobalt
CAS#: 635680-58-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 350C

Thermal Co

Hardware used: Quros Plus 150
Bis(N,N'-diisopropylacetamidinato)cobalt
CAS#: 635680-58-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: -

Substrates

Si(001)
SiO2
OTS, OctadecylTrichloroSilane

Notes

702