Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics

Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 05FH01 (2016)
Date:
2015-10-14

Author Information

Name Institution
Jie-Jie ZhuXidian University
Xiao-Hua MaXidian University
Wei-Wei ChenXidian University
Bin HouXidian University
Yong XieXidian University
Yue HaoXidian University

Films

Plasma AlN


Thermal Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

GaN

Keywords

Notes

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