Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Type:
Journal
Info:
Journal of Energy Chemistry 22 (2013) 403-407
Date:
2013-03-15
DOI:
https://doi.org/10.1016/S2095-4956(13)60052-2

Author Information

Name Institution
Jusang ParkYonsei University
Han-Bo-Ram LeeIncheon National University
Doyoung KimUlsan National Institute of Science and Technology
Jaehong YoonYonsei University
Clement LansalotAir Liquide
Julien GatineauAir Liquide
Henri ChevrelAir Liquide
Hyunjun KimYonsei University

Films

Plasma Co

Hardware used: Quros Plus 150
bis(methylcyclopentadienyl) cobalt, Co(MeCp)2
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 100-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1590