Publication Information

Title: Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant

Type: Journal

Info: Current Applied Physics Volume 17, Issue 3, 2017, Pages 333 - 338

Date: 2016-12-23

DOI: https://doi.org/10.1016/j.cap.2016.12.021

Author Information

Name

Institution

Yonsei University

Yonsei University

Incheon National University

Films

Plasma Co using Quros Plus 150

Deposition Temperature = 300C

1277-43-6

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Pfeiffer QMS 200

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

JEOL 7401

Bonding States

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Substrates

Si-H

Keywords

Notes

894



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