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Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant

Type:
Journal
Info:
Current Applied Physics Volume 17, Issue 3, 2017, Pages 333 - 338
Date:
2016-12-23
DOI:
https://doi.org/10.1016/j.cap.2016.12.021

Author Information

Name Institution
Il-Kwon OhYonsei University
Hyungjun KimYonsei University
Han-Bo-Ram LeeIncheon National University

Films

Plasma Co

Hardware used: Quros Plus 150
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Pfeiffer QMS 200

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 7401

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Substrates

Si-H

Notes

894