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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-09-30
Author Information
| Name | Institution |
|---|---|
| Alexander Pyymaki Perros | Aalto University |
| Markus Bosund | Aalto University |
| Timo Sajavaara | University of Jyväskylä |
| Mikko Laitinen | University of Jyväskylä |
| Lauri Sainiemi | Aalto University |
| Teppo Huhtio | Aalto University |
| Harri Lipsanen | Aalto University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
Notes
| Beneq TFS-500 PEALD AlN for SF6/O2 plasma etch mask study. |
| 178 |