Publication Information

Title:
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-09-30

Author Information

Name Institution
Alexander Pyymaki PerrosAalto University
Markus BosundAalto University
Timo SajavaaraUniversity of Jyväskylä
Mikko LaitinenUniversity of Jyväskylä
Lauri SainiemiAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Substrates

Si(100)

Keywords

Etch Mask
Etch Resistance

Notes

Beneq TFS-500 PEALD AlN for SF6/O2 plasma etch mask study.
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