Publication Information

Title: The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2

Type: Journal

Info: Phys. Status Solidi A 209, No. 2, 302-305 (2012)

Date: 2011-10-24

DOI: http://dx.doi.org/10.1002/pssa.201127280

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma Ru using Custom ICP

Deposition Temperature Range N/A

32992-96-4

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

XRR, X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Microstructure

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

SiO2

Keywords

Notes

Looked at pretreating the SiO2 substrate with Ar, H2, O2, NH3, and nothing.

116



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