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The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
Type:
Journal
Info:
Phys. Status Solidi A 209, No. 2, 302-305 (2012)
Date:
2011-10-24
Author Information
| Name | Institution |
|---|---|
| Taeyong Park | Hanyang University |
| Dongjin Choi | Hanyang University |
| Hagyoung Choi | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma Ru
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Substrates
| SiO2 |
Notes
| Looked at pretreating the SiO2 substrate with Ar, H2, O2, NH3, and nothing. |
| 116 |