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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Silicon surface passivation with atomic layer deposited aluminum nitride

Type:
Conference Proceedings
Info:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Date:
2016-06-05
DOI:
http://dx.doi.org/10.1109/PVSC.2016.7750205

Author Information

Name Institution
P. RepoAalto University
Y. BaoAalto University
Heli SeppänenAalto University
Perttu SippolaAalto University
Hele SavinAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

968