Publication Information

Title:
Silicon surface passivation with atomic layer deposited aluminum nitride
Type:
Conference Proceedings
Info:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Date:
2016-06-05

Author Information

Name Institution
P. RepoAalto University
Y. BaoAalto University
Heli SeppänenAalto University
Perttu SippolaAalto University
Hele SavinAalto University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Keywords

Passivation

Notes

968