Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes

Type:
Poster
Info:
ALD 2011
Date:
2011-06-26
DOI:
No DOI

Author Information

Name Institution
Mustafa AlevliBilkent University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Transmittance
Analysis: -
Diagnostic: -

Characteristic: Absorption Edges
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Substrates

Notes

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